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SiA911EDJ
Vishay Siliconix
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V GS = 0 V, I D = - 250 μA
I D = - 250 μA
- 20
- 21
2.1
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = - 250 μA
- 0.4
-1
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = - 20 V, V GS = 0 V
V DS = - 20 V, V GS = 0 V, T J = 55 °C
V DS ≤ - 5 V, V GS = - 4.5 V
V GS = - 4.5 V, I D = - 2.7 A
- 10
0.083
± 100
-1
- 10
0.101
μA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = - 2.5 V, I D = - 2.3 A
0.115
0.141
Ω
V GS = - 1.8 V, I D = - 1 A
0.153
0.192
Forward Transconductance a
g fs
V DS = - 10 V, I D = - 2.7 A
7
S
Dynamic b
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = - 10 V, V GS = - 8 V, I D = - 3.6 A
V DS = - 10 V, V GS = - 4.5 V, I D = - 3.6 A
7.1
4.2
0.7
11
6.5
nC
Gate-Drain Charge
Q gd
1.2
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = - 10 V, R L = 3.5 Ω
I D ? - 2.9 A, V GEN = - 4.5 V, R g = 1 Ω
600
92
200
700
140
300
1100
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
400
32
600
50
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = - 10 V, R L = 3.5 Ω
I D ? - 2.9 A, V GEN = - 8 V, R g = 1 Ω
70
990
410
105
1500
615
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current
I S
I SM
T C = 25 °C
- 4.5
- 10
A
Body Diode Voltage
V SD
I S = - 2.9 A, V GS = 0 V
- 0.9
- 1.2
V
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 68927
S09-0389-Rev. B, 09-Mar-09
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